Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 3711-3713
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ferroelectric SrBi2Ta2O9 thin films have been deposited on the Bi4Ti3O12 buffered Pt/Ti/SiO2/Si substrates using the metalorganic decomposition technique at annealing temperatures ranging from 600 to 750 °C. No pyrochlore phase was found in the SrBi2Ta2O9 thin films although the Bi2Ti2O7 phase appeared in the Bi4Ti3O12 buffer layers. A SrBi2Ta2O9 film with (200) predominant orientation was formed at 650 °C. The effects of the Bi4Ti3O12 buffer layer and post-annealing temperature on the structure, surface morphology, and electrical properties of SrBi2Ta2O9 thin films were analyzed. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123229
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