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  • 1
    Electronic Resource
    Electronic Resource
    Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/Si(001) structures using medium-energy ion scattering spectroscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 673-675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study the depth profile and lattice location of Sb atoms in Si/Sb(δ-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the δ-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the location of the original Sb δ layer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122983
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