Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 91-93
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Si(100)-(2×1) was exposed to gas-phase atomic hydrogen, H(g), at various substrate temperatures Ts between 115 and 300 K. No low-energy electron diffraction patterns could be obtained from such hydrogenated surfaces. In temperature-programmed desorption measurements, SiHx(x=1–3) radical species as well as SiH4 desorbed at Ts between 600 and 1000 K, in addition to β1- and β2–H2 desorption peaks. Combined together, the results indicate that amorphous hydrogenated silicon (a-Si:H) films are formed. While surface etching competes, a-Si:H formation dominates. Once formed, a-Si:H further suppresses etching. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124286
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