Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 1360-1362
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Indium–gallium nitride (InGaN) multiple-quantum-well (MQW) light-emitting diode (LED) membranes, prefabricated on sapphire growth substrates, were created using pulsed-excimer laser processing. The thin-film InGaN MQW LED structures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive. A single 600 mJ/cm2, 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire, followed by a low-temperature heat treatment to remove the substrate. Free-standing InGaN LED membranes were then fabricated by immersing the InGaN LED/adhesive/Si structure in acetone to release the device from the supporting Si substrate. The current–voltage characteristics and room-temperature emission spectrum of the LEDs before and after laser lift-off were unchanged. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124693
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