Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2108-2110
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The strain relaxation process of ZnSe grown by molecular beam epitaxy on GaAs(001) has been studied using high resolution x-ray diffraction. One single sample with a tailored thickness gradient has been used, allowing us to continuously follow the strain in a wide range of thicknesses. The relaxation starts around 1300 Å with the coexistence of fully strained and partially relaxed regions of the ZnSe and continues up to 1600 Å. These findings can be explained by the formation of misfit dislocations on the top surface with subsequent migration to the ZnSe/GaAs interface. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124932
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