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Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy (1999)

Meoded, T. ; Shikler, R. ; Fried, N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 2435-2437

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the use of Kelvin force microscopy as a method for measuring very short minority carrier diffusion length in semiconductors. The method is based on measuring the surface photovoltage between the tip of an atomic force microscope and the surface of an illuminated semiconductor junction. The photogenerated carriers diffuse to the junction, and change the contact potential difference between the tip and the sample as a function of the distance from the junction edge. The diffusion length L is then obtained by fitting the measured contact potential difference using the minority carrier continuity equation. The method is applied to measurements of electron diffusion lengths in GaP epilayers. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.125039

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