Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 3503-3505
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a near-field scanning optical microscopy (NSOM) study of S interdiffusion in polycrystalline CdS/CdTe heterojunctions. S diffusion from CdS into CdTe leads to the formation of a CdTe1−xSx ternary phase. Because the band gap of CdTe1−xSx varies with S composition, we were able to combine NSOM with a tunable laser source to microscopically identify S-rich regions in the CdTe layer. S composition was found to be very nonuniform and frequently to be greater along grain boundaries than in the grain centers, identifying grain boundaries as locations of enhanced interdiffusion. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125369
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