Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 4115-4117
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The purpose of this letter is to study, using transmission electron microscopy, the nitridation of the (0001) sapphire surface which is a key step for the fabrication of high-quality GaN materials. A nitridation conducted at 1080 °C during 7 min at atmospheric pressure with a 2 slm NH3 flow, results in the formation of a fully crystalline 10-atomic-planes-thick AlN film by the chemical transformation of the Al2O3 surface. From measurements of interplanar distances in high-resolution images, we show that this chemical transformation is incomplete, i.e., that a few Al vacancies and/or O atoms remain in the AlN structure. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125554
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