Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 352-354
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Microstructures of oxygen ion implanted SiC have been examined using transmission electron microscopy (TEM) and scanning transmission electron microscopy equipped with an energy-dispersive x-ray spectrometer. 6H-SiC (0001) substrates were implanted with 180 keV oxygen ions at 650 °C to fluences of 0.7×1018 and 1.4×1018/cm2. A continuous buried oxide layer was formed in both samples, while the surrounding 6H-SiC contained minimal damage. These results suggest that oxygen implantation into SiC is a useful technique to establish SiC-on-insulator structures. In bright-field TEM images, the amorphous layer possessed uniform contrast in the low-dose sample, while it consisted of three distinct layers in the high-dose sample: (1) a bubbled or mottled layer; (2) a dark contrast layer; and (3) a light contrast layer. Chemical measurements revealed that the bubbled and light contrast regions have low silicon and oxygen contents, while carbon enrichment was found in these layers. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124372
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