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Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide (2000)

Chung, G. Y. ; Tin, C. C. ; Williams, J. R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 1713-1715

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Results of capacitance–voltage measurements are reported for metal–oxide–semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide–semiconductor interface. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126167

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