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Ultranarrow polaritons in a semiconductor microcavity (2000)

Jensen, J. R. ; Borri, P. ; Langbein, W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 3262-3264

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polariton linewidth (190 μeV), in a semiconductor λ microcavity with a single 25 nm GaAs quantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces the exciton broadening due to scattering with free charges and has a very low spatial gradient of the cavity resonance energy. Since the static quantum-well disorder is very small, the polariton broadening is dominantly homogeneous. Still, the measured linewidths close to zero detuning cannot be correctly predicted using the linewidth averaging model. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126601

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