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Refractive index and gap energy of cubic InxGa1−xN (2000)

Goldhahn, R. ; Scheiner, J. ; Shokhovets, S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 291-293

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Spectroscopic ellipsometry studies have been carried out in the energy range from 1.5 to 4.0 eV in order to determine the complex refractive indices for cubic InGaN layers with various In contents. The films were grown by molecular-beam epitaxy on GaAs(001) substrates. By studying GaN films, we prove that for the analysis of optical data, a parametric dielectric function model can be used. Its application to the InGaN layers yields, in addition, the composition dependence of the average fundamental absorption edge at room temperature. From the latter, a bowing parameter of 1.4 eV is deduced. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.125725

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