ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Atomic-scale study of GaMnAs/GaAs layers (2000)

Grandidier, B. ; Nys, J. P. ; Delerue, C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 4001-4003

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Cross-sectional scanning tunneling microscopy was used to study GaMnAs diluted magnetic semiconductors grown by low temperature molecular beam epitaxy. The Ga1−xMnxAs layer, containing a concentration of x=0.005, shows that the dominant defect in the material is the arsenic antisite. Mn ions can also be resolved and show a signature distinct from the arsenic antisites. Spectroscopic measurements are perfomed to study the variation of the Fermi level between the Ga0.995Mn0.005As and GaAs layers. The Mn ions act as acceptor dopants. However, for x=0.005, the Mn concentration in comparison with the As antisite concentration is too small to induce a significant change of the Fermi level from the midgap position, preventing the layer from being ferromagnetic. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1322052

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit