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High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography (2000)

Rennon, S. ; Bach, L. ; Reithmaier, J. P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 325-327

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Laterally complex coupled distributed feedback lasers have been fabricated by focused-ion-beam lithography on completely grown InGaAsP/InP laser structures emitting at 1.55 μm. The grating definition is based on implantation-enhanced quantum-well intermixing and wet chemical etching and allows the fabrication of complex coupled antiphase gratings without any further overgrowth step. Side-mode suppression ratios of 45 dB and bandwidths for direct modulation beyond 13 GHz were obtained for 300-μm-long devices. The lasers exhibit frequency-modulation response values lower than 200 MHz/mA and feature a low sensitivity to back-reflected light. Preliminary lifetime measurements over 7000 h continuous-wave operation at room temperature show no significant indication for long-time degradation. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126965

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