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Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant (2000)

Kahng, S.-J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 981-983

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2×1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski–Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1288005

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