Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 2629-2631
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using an electrically pumped multisection technique, we have directly measured the internal optical mode loss of semiconductor-laser structures containing 1, 3, 5, and 7 layers of uncoupled InGaAs quantum dots. The optical loss does not increase with the number of dot layers so higher net modal gain can be achieved by using multiple layers. The maximum modal gain obtained from the ground state increases with dot layer number from 10±4 cm−1 for a single layer to 49±4 cm−1 for the 7 layer sample, which is typical of the threshold gain requirement of a 350 μm long device with uncoated facets. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1366652
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