Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3842-3844
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low-resistance and nonalloyed ohmic contacts to epitaxially grown n-ZnO were formed by exposing n-ZnO to an inductively coupled hydrogen and an argon plasma. Using Ti/Au, the specific contact resistivity of the ohmic contact was drastically decreased from 7.3×10−3 to 4.3×10−5 Ω cm2 by hydrogen plasma treatment. The photoluminescence spectrum of the hydrogen plasma treated ZnO showed a large enhancement in band-edge emission and a strong suppression in deep-level emission. These results suggest that the low contact resistivity can be attributed to an increase in carrier concentration on the ZnO surface. The specific contact resistivity of the Ar-plasma treated sample was also decreased to 5.0×10−4 Ω cm2, presumably due to the formation of shallow donor on the ZnO surface by ion bombardment. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1379061
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