Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 1071-1073
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Spike thermal annealing is examined for electrical activation of B implants into 100 nm Si films deposited over 1.5 to 2.4 nm thermally grown SiO2. These structures simulate gate stacks in advanced p-type metal–oxide–Si (PMOS) devices. Spike anneals, at minimized thermal budget, are shown to yield higher carrier concentrations in PMOS polycrystalline-silicon (poly-Si), as compared to conventional rapid thermal annealing. The activation energy for B diffusion through SiO2 is found to be 3.71 to 3.83 eV and near that previously reported for furnace anneals. Boron penetration appears unaffected by photoexcitation from heating lamps. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1348307
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