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Electrochemical carbon nanotube field-effect transistor (2001)

Krüger, M. ; Buitelaar, M. R. ; Nussbaumer, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 1291-1293

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with |EF|(approximate)0.3–0.5 eV, corresponding to a doping level of (approximate)1013 cm−2. Hole-doping increases in the electrolyte. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1350427

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