ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

H–Si doping profile in GaAs by scanning tunneling microscopy (2001)

Grandidier, B. ; Silvestre, S. ; Nys, J. P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 3278-3280

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Hydrogen incorporation in n-type Si-doped GaAs layers results in the neutralization of the active dopants and a change of the conductivity along the growth direction. To characterize the active dopant concentration of doped GaAs layers containing hydrogen, we have used secondary ion mass spectroscopy and cross-sectional scanning tunneling microscopy. Spectroscopic measurements are performed as well as conductance images to visualize the variation of the conduction band-edge position. Such a variation, which is related to the concentration of Si–H complexes, allows the determination of the doping profile. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1418457

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit