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Mechanism of electron trapping in Ge-doped SiO2 glass (2001)

Uchino, T. ; Takahashi, M. ; Yoko, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 359-361

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present a possible mechanism of electron trapping in Ge-doped SiO2 glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called "Ge(1) and Ge(2)" centers are distinctly different electron centers rather than GeO4− variants and that an electron trapped at an oxygen vacancy site is a promising candidate for Ge(2). © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1383273

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