Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 302-304
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report optically pumped lasing at λ∼3.4 μm from an integrated absorber structure in which the electrons confined in the InAs quantum wells recombine with holes in adjacent InGaAsSb layers to provide the gain. This type-II laser exhibits an estimated photon-to-photon conversion rate of ∼24% at 85 K. The self-consistent empirical pseudopotential method calculations suggest that Coulomb attraction can lead to a strong enhancement in carrier overlap, and the resulting small shift in transition energy is consistent with that observed. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1385581
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