Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 1157-1159
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A spin-valve transistor with an epitaxial Fe/Au/Fe(001) base was formed on n-GaAs, the characteristics of which were examined under a magnetic field for emitter voltages up to 3 V. The transfer ratio of the transistor, i.e., the ratio of collector-to-emitter current exceeded 10−3 at 3 V, preserving the magnet current ratio, i.e., the ratio of collector current in the parallel-to-antiparallel magnetic configuration well above 100%. It was suggested that the transfer ratio would be further enhanced by improving the flatness of the tunnel junction for injecting electrons from the emitter into the base, as well as by increasing the electron transmittance at the base/collector interface. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1397257
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