ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A resonant-cavity InGaN/GaN multiple-quantum-well (MQW) light-emitting diode, incorporating a semitransparent Bragg reflector, has been grown by molecular-beam epitaxy. A 30% reflectivity AlGaN/GaN distributed Bragg reflector and a Ni coating were used as bottom and top mirrors, for backside emission. High-resolution x-ray diffraction data reveal high-quality interfaces in both the MQW and the Bragg mirror. Room-temperature electroluminescence is centered at 507 nm, with an estimated output power of 5 μW at 20 mA. The external efficiency is increased by a factor of 12 compared to similar structures without resonant cavity. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1463701