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Thin-film transistors based on well-ordered thermally evaporated naphthacene films (2002)

Gundlach, D. J. ; Nichols, J. A. ; Zhou, L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 2925-2927

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm2/V s, current on/off ratio greater than 106, negative threshold voltage, and subthreshold slope of 1 V/decade. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1471378

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