ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of the III/V ratio and growth temperature on the In incorporation has been studied in thick (〉300 nm) InGaN layers, with In mole fractions from 19% to 37%, grown by molecular-beam epitaxy on sapphire and on GaN templates. Significant desorption of In occurs at growth temperatures above 550 °C. Symmetric and asymmetric reflections from high resolution X-ray diffraction reveals that the layers are not fully relaxed. A bowing parameter of 3.6 eV is calculated from optical absorption data, once corrected for strain-free band gap values. The increase of both, the absorption band-edge broadening and the photoluminescence full width at half maximum at room temperature with the In content, is discussed in terms of a strong In localization effect. This localization effect is further evidenced by the S-shaped temperature dependence of the emission energy. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1432751
