ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Hydrogen response mechanism of Pt–GaN Schottky diodes (2002)

Schalwig, J. ; Müller, G.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 1222-1224

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current–voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1450044

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit