Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1580-1582
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Phosphorous δ-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope images indicate large H coverage, and regions of c(2×2) structure. Hall data imply full carrier activation with mobility 〈40 cm2/V s when the surface coverage is (approximately-less-than)0.2 ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1456949
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