Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 1065-1067
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hafnium dioxide films have been deposited using reactive electron beam evaporation in oxygen on hydrogenated Si(100) surfaces. The capacitance–voltage curves of as-deposited metal(Ti)–insulator–semiconductor structures exhibited large hysteresis and frequency dispersion. With post-deposition annealing in hydrogen at 300 °C, the frequency dispersion decreased to less than 1%/decade, while the hysteresis was reduced to 20 mV at flatband. An equivalent oxide thickness of 0.5 nm was achieved for HfO2 thickness of 3.0 nm. We attribute this result to a combination of pristine hydrogen saturated silicon surfaces, room temperature dielectric deposition, and low temperature hydrogen annealing. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1495882
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