ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
An apparatus for applying uniaxial stress to a single-crystal has been constructed. The stress is produced by turning a differential screw and is measured by a strain gauge. The device fits on a goniometer of a four-circle diffractometer and can rotate around all three axes of the goniometer without restrictions. The lattice constants of Si stressed along [111] were measured and compared with ultrasonically measured elastic constants. The internal stress parameter ξ was calculated from changes of the intensity of the 600 reflection: ξ = 0.74 ± 0.04, larger than the value generally accepted (ξ = 0.64 ± 0.04). The implications of this unexpected result are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0021889882011698