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X-ray diffraction moiré topography as a means to reconstruct relative displacement fields in weakly deformed bicrystals (1999)

Ohler, M. ; Köhler, S. ; Härtwig, J.

[S.l.] : International Union of Crystallography (IUCr)

Acta crystallographica 55 (1999), S. 423-432

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ISSN: 1600-5724

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Chemistry and Pharmacology , Geosciences , Physics

Notes: X-ray diffraction topographs of wafers produced by separation by implanted oxygen (SIMOX) show moiré fringes in both reflection and transmission geometry. These fringes reveal deformations of the order of 10−6 to 10−8 between the layer and the substrate of the SIMOX material. A new method for a quantitative analysis of moiré fringes is developed and allows reconstruction with a high sensitivity of the three components of the relative displacement field between layer and substrate directly from a set of topographs. This method is used for the interpretation of moiré topographs of entire 4 in SIMOX wafers and of regions around crystal defects. Finally, the capabilities of an analysis of moiré fringes are compared with those of the usual diffraction topography.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1107/S0108767398010794

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