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    ISSN: 1436-5073
    Keywords: Key words: SEM; EPMA; Yttrium doped BaTiO3.RID=""ID=""〈E5〉Acknowledgement.〈/E5〉 This publication is based on work partially sponsored by the U.S. – Slovene Science and Technology Joint Fund in cooperation with the Ministry of Science and Technology of Slovenia under Project Number US-SLO 95/6-05.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract.  Yttrium-doped BaTiO3 ceramics have been studied as a potential material for positive temperature coefficient resistors (PTCR). The mechanism of Y incorporation into BaTiO3 plays an important role for displaying good electrical properties. Determination of the amount of yttrium in the BaTiO3 as well as microstructure characterization of the samples were performed using SEM, EDS and WDS analysis. An optimized trace element WDS quantitative analysis was applied to determine elemental concentrations for Ba, Ti and Y in the samples as accurately as possible. BaTiO3 and Y2O3 were used as standards. Analysis was undertaken using a JEOL JXA 840A electron probe microanalyzer. WDS X-ray intensity measurements were performed under 20 kV, 50 nA beam current and 0.2% preset standard counting deviation (σc) using a PET crystal. Measured k-ratios were quantified by ZAF matrix correction. Average results of WDS quantitative analysis showed 20.17 ± 0.08 at % Ti, 19.95 ± 0.09 at % Ba, 0.22 ± 0.03 at % Y, and 59.66 at % O. The results suggest incorporation of yttrium in the BaTiO3 preferentially at the Ba-sites, however partial incorporation of Y at Ti-sites could not be excluded.
    Type of Medium: Electronic Resource
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