ISSN:
1432-0630
Keywords:
61.70
;
72.20
;
72.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atE v +0.1 eV and the donor level of FeB pairs atE c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014–1016 cm−3 supposing theE c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01594232
