ISSN:
1432-0630
Keywords:
PACS: 73.61.Ng; 41.75; 68.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Ultrathin silicon-nitride films have been synthesized on silicon substrates by low-energy nitrogen-ion-beam bombardment. The thicknesses of the obtained films are found to increase slightly with the duration of bombardment. Capacitance–voltage and current–voltage characteristics of silicon-nitride films prepared at different bombarding times show that the density of damages, charges in the films and interface states, the capacitance of the obtained ultrathin silicon-nitride films, the flat-band capacitance and the flat-band voltage increase with the duration of the bombarding process. The results of these analyses suggest a short bombarding processing for such a silicon-nitridation technique proposed here.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01542876
