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Electrical conduction in Cu/Mn multilayer films (1989)

Angadi, M. A. ; Nallamshetty, K.

Springer

Applied physics 49 (1989), S. 273-277

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ISSN: 1432-0630

Keywords: 73.60

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford 〉5 nm. The thickness dependence of room temperature resistivity (ϱ RT) and TCR shows oscillatory behaviour.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00616854

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