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Optical absorptivity of ion-beam irradiated silicon (1988)

Bhatia, K. L. ; Krätschmer, W. ; Kalbitzer, S.

Springer

Applied physics 45 (1988), S. 69-72

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ISSN: 1432-0630

Keywords: 78.65 ; 61.80J

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Single-crystal layers of silicon on sapphire have been irradiated with Ne and Kr ions at room temperature. The concomitant changes in optical absorption have been measured as a function of photon energy. The absorptivity of the amorphized silicon is about one order of magnitude higher as compared to the crystalline state in the photon energy interval of 1.5–3 eV. This is sufficient for generating optical patterns of high contrast by irradiation of selected parts of the wafer.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00618765

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