ISSN:
1432-0630
Keywords:
42.80
;
85.30
;
85.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Both low attenuation silica optical fibers with peak transmission in the wavelength regions of 0.85 μm, and 1.05 μm, and improved lasers at both wavelengths are now available. In this review paper, the principal components for emission, modulation and detection are described. The characteristics of both semiconductor lasers, made of GaAs and related compounds, emitting at 0.85 μm or 1.05 μm and high neodymium-content lasers are discussed. For modulation, current modulation of GaAs lasers and external electro-optic modulation are considered. Concerning detection, the realisation of Si photodetectors suitable at 0.85 μm and the new photodetectors at 1.05 μm from Ga1−x In x As are reviewed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00882884
