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Quantitative aspects of the desorption of copper from the silicon (100) surface (1995)

Göbel, U. ; Atamny, F. ; Bensch, W. ; [et al.]

Springer

Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 320-323

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ISSN: 1618-2650

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology

Notes: Abstract The desorption of copper from copper contaminated Si(100) samples has been investigated by thermal desorption spectroscopy (TDS). The samples have been contaminated with aqueous CuSO4/EDTA solutions. The amount of copper deposited on the Si surface was in the monolayer region as determined by means of ratio-tracer experiments. The copper is adsorbed on the sample surface in two different states, which could be resolved by TDS. By means of STM and XPS measurements it was possible to assign these two desorption peaks to the desorption of copper from carbon deposits, which had already been present before the contamination process, and to the desorption of copper from the bare Si surface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00322060

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