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Features of the electrical compensation of bismuth impurities in PbSe (1998)

Nemov, S. A. ; Gavrikova, T. A. ; Zykov, V. A. ; [et al.]

Springer

Semiconductors 32 (1998), S. 689-691

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ISSN: 1063-7826

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract Self-compensation is studied in bulk samples of PbSe: (Bi, Seex) prepared by a metal-ceramic method. The dependence of the carrier concentration on the amount of excess selenium is investigated for various bismuth concentrations. Comparison of the experimental data with calculated data shows that the donorlike activity of bismuth accommodated in the cation sublattice is compensated by doubly ionized lead vacancies. Nonmonotonic behavior of the dependence of the carrier concentration on the selenium excess is observed in some series of samples due to the incorporation of Bi atoms into both the cation and anion sublattices.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1187484

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