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Preparation and photosensitivity of heterostructures based on anodized silicon carbide (1998)

Lebedev, A. A. ; Rud’, Yu. V. ; Rud’, V. Yu.

Springer

Semiconductors 32 (1998), S. 295-296

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ISSN: 1063-7826

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract Heterojunctions were obained by mechanical clamping of anodized 6H-SiC wafers to wafers of layered III–VI semiconductors (InSe and GaSe) at 300 K. On account of the high degree of perfection of the cleavage surfaces, a strong and quite perfect electrical contact is formed. The photo-emf spectrum of the heterojunctions has the form of a wide band. The longwavelength edge of this band is due to the narrow-gap component and the short-wavelength edge is due to the narrow-gap component and the short-wavelength edge is due to absorption in SiC.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1187349

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