ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Two techniques for determining the activation energies of centers that create deep levels in the space-charge region (SCR) of p-n junctions are developed on the basis of the Shockley-Read-Hall recombination model. The proposed techniques are based on a consideration of recombination currents in the SCR for a low injection level. The first technique involves a differential analysis of the reduced recombination rate ∂R np(U)/∂U and the second technique involves an analysis of the dependence R np 2 (U)/exp(qU/2kT). These techniques are used to analyze the current-voltage characteristics of gold-doped silicon p +-n diodes. The gold-related deep center activation energies obtained from the current-voltage characteristics are in good agreement with the available data in the literature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187567
