ISSN:
1572-8986
Keywords:
Plasma chemistry
;
plasma etching
;
spectroscopy
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract The decomposition of CCl4 in an rf discharge starts by a very fast electron attachment mechanism $$\begin{gathered} CCl_4 \xrightarrow{{ + e}}(CCl_4^ - ) \to CCl_3 + Cl^ - \hfill \\ \hfill \\ k_0 \hfill \\ \end{gathered}$$ A first-order rate constant, (k0 · ne) ≈ 10+2−10+3 s−1, is estimated by two-channel time-resolved emission spectroscopy. The ability of the method to detect the change of concentrations in plasma processes is discussed. A steady-state product distribution containing CCl4, C2Cl4, C2Cl6, Cl2, and glow polymer as main products is formed via recombination processes. The influence of plasma power density on this product distribution is given by gas-chromatographic results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00568833
