ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract High-quality and uniform bulk layers of (Al x Ga1−x )0.5In0.5P (x=0–0.7) and AlGalnP/GainP quantum wells (QWs) are grown on 2°-off (100) GaAs substrates by low-pressure metal organic vapour phase epitaxy at a low growth rate of 0.3 nm s-1. The amount of lattice mismatch and the variation of PL peak energy of (Al0.5Ga0.5)0.5In0.5P on the 50-mm substrate are less than 6×10-4 and 2 meV, respectively. (Al0.5Ga0.5)0.5In0.5P/Ga0.5In0.5P SQWs show narrow PL spectra even from a 0.6 nm well measured at 20 K. The variation of PL peak energy from (Al0.5Ga0.5)0.5In0.5P/Ga0.5In0.5P MQWs is less than 10 meV. Also, as-cleaved AlGalnP/GalnP lasers fabricated by a three-step MOVPE show a pulsed threshold current of 82 mA at room temperature, output power of 12 mW, and the lasing wavelength at 668.2 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00563585
