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Below-bandgap refractive index of AlAs/GaAs multiple quantum wells (1991)

Hubler, G. K. ; Waddell, C. N. ; Donovan, E. P. ; [et al.]

Springer

Optical and quantum electronics 23 (1991), S. S883

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ISSN: 1572-817X

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract Precision reflection measurements were performed on GaAs/AlAs superlattices of the same composition but different layer spacings. Nonlinear-least-squares fits to the data were performed to a single layer. Measurements were extracted for the superlattice thickness, thickness of a disturbed interface layer between the superlattice and substrate, the uniformity in composition and/or spacing and the composition. It was demonstrated that these nondestructive measurements in the infrared region (3000 to 12 000 cm−1) in conjunction with a simple single layer model are capable of accurately yielding the above quantities with high precision.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00624977

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