ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The thermal properties of broad-contact double-heterostructure GaAs-(AlGa)As laser diodes under steady-state conditions are presented in this paper. The nonhomogeneous, layered structure of the laser diode has been reduced to the thermally equivalent, homogeneous GaAs structure. The active layer heating due to nonradiative recombination and reabsorption of radiation, the radiative transfer of spontaneous radiation through the wide-gap passive layers, and Joule heating have been taken into consideration. The temperature dependence of the GaAs thermal conductivityλ(T) has been also taken into account. The relative influence on the temperature distributions of the individual heat sources, the internal quantum efficiency of the spontaneous emission, and the thickness and the resistivities of the individual layers have been discussed. The model may be used for all broad-contact laser diodes including the high-power large-optical-cavity laser diodes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00620020
