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Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs (1979)

Su, Y. K. ; Chang, C. Y. ; Wu, T. S.

Springer

Optical and quantum electronics 11 (1979), S. 109-117

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ISSN: 1572-817X

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00624389

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