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Microwave Surface Impedance of Nd-rich Nd 1+x Ba 2−x Cu 3 O 7−δ Thin Films (1999)

Salluzzo, M. ; Andreone, A. ; Palomba, F. ; [et al.]

Springer

Journal of low temperature physics 117 (1999), S. 687-691

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ISSN: 1573-7357

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract Surface impedance measurements on highly c-axis epitaxial Nd 1+x Ba 2−x Cu 3 O 7 (x=0, 0.09 and 0.12) films grown by d.c. magnetron sputtering on LaAlO 3 substrates are presented. It is found that the zero temperature London penetration depth correlates well with the critical temperature of the films and with the corresponding number of carriers. The low temperature penetration depth follows a linear T law for optimally doped Nd123 sample and a T 2 law in Nd-rich samples. In the case of the heavily underdoped samples (T c 〈 60K) the T 2 law extends to temperatures higher than T c/2. The possible role of the Nd/Ba ions substitution on the penetration depth and surface resistance is discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1023/A:1022580808604

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