ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract This study investigated single magnetic crystal Au/Ag/Fe layers directly grown (in situ) on (001) Al x Ga1 −x As Schottky diodes by molecular beam epitaxy. The barrier height was found to increase with increasing Al content to a maximum of 0.934 eV for Au/Ag/Fe/AlAs, which can endure the highest operational temperatures. Annealing caused interdiffusion and the formation of some compound phases. Results of current-voltage (I-V) and capacitance-voltage (C-V) measurements revealed that increasing the doping concentration with increasing annealing temperature causes the Au/Ag/Fe/Al x Ga1 −x As effective barrier height to decrease. The mechanisms are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00703027
