ISSN:
1572-896X
Keywords:
Si
;
Er
;
Yb
;
nanocrystal
;
photoluminescence
;
energy transfer
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
,
Technology
Notes:
Abstract Photoluminescence (PL) properties of SiO2 films containing Si nanocrystals (nc-Si) and Er3+ (Yb3+) were studied. PL peaks attributable to the recombination of electron–hole pairs in nc-Si (∼1.5 eV) and the intra-4f shell transition of Er3+ (∼0.81 eV) (Yb3+ (∼1.26 eV)) were observed simultaneously at room temperature. Correlation of the two peaks was studied as a function of nanocrystalline size. It was found that the intensity of the Er3+-related (Yb3+-related) peak increases drastically as the size of nc-Si decreases. Temperature dependence of PL spectra was studied. In the case of Yb-doped samples, temperature quenching of the PL became small as the size decreased, while in the case of Er-doped samples, no remarkable temperature dependence was observed. Two major features of the quantum size effects of nc-Si, i.e., the band-gap widening and the increase in the PL efficiency with decreasing the size, are thought to contribute to the improvement of room temperature PL efficiency of Er3+ (Yb3+).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1010091327714
