ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Nanosized silicon carbide powders of high purity and low oxygen content have been prepared by thermal chemical vapour deposition (CVD) of dimethyldichlorosilane at pyrolytic temperatures, 1100–1400 °C. The nanosized silicon carbide particles prepared at 1400 °C consist of small crystallites of β-SiC arranged randomly in the particles. At pyrolytic temperature below 1300 °C, the particles consist of amorphous phase and β-type SiC crystallites. The average particle size changed from 70 nm to 40 nm and the average size of the β-SiC crystallite changed from 7.3 nm to 1.8 nm depending on the pyrolysis conditions. The C/Si molar ratios of the product powders changed from 0.5 to 1.07 with the CVD conditions. The near theoretical values of C/Si molar ratio of the product powders within 0.95–1.05 can be controlled by CVD conditions such as pyrolytic temperature and reactant concentration. Finally, the product powders were characterized by chemical analysis, X-ray diffraction, electron microscopy, and infrared spectroscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00356457
